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Analysis of effects of ambients (temperature and light intensity) on the electrical breakdown in bipolar transistors

Ramkumar, K and Satyam, M (1988) Analysis of effects of ambients (temperature and light intensity) on the electrical breakdown in bipolar transistors. In: International Journal of Electronics, 65 (2). pp. 193-203.

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Abstract

This paper presents an analysis of the effects of ambients-temperature and light intensity on the V-l characteristics of bipolar transistors under electrical breakdown. The analysis is based on the transportation and storage of majority carriers in the base region. It is shown that this analysis can explain the observed shift in the V-l characteristics to lower voltages with increase in either temperature or light intensity.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Taylor and Francis Group.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 31 Aug 2010 10:01
Last Modified: 31 Aug 2010 10:01
URI: http://eprints.iisc.ernet.in/id/eprint/31595

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