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Optimum atomic spacing for AlAs etching in GaAs epitaxial lift-off technology

Rao, KSRK and Katayama, T and Yokoyama, S and Hirose, M (2000) Optimum atomic spacing for AlAs etching in GaAs epitaxial lift-off technology. In: Japanese Journal of Applied Physics, 39 (5B). L457-L459.

Full text not available from this repository.
Official URL: http://jjap.ipap.jp/link?JJAP/39/L457/

Abstract

With respect to GaAs epitaxial lift-off technology, we report here the optimum atomic spacing (5-10 nm) needed to etch off the AlAs release layer that is sandwiched between two GaAs epitaxial layers. The AlAs etching rate in hydrofluoric acid based solutions was monitored as a function of release layer thickness. We found a sudden quenching in the etching rate, approximately 20 times that of the peak value, at lower dimensions (similar to2.5 nm) of the AlAs epitaxial layer. Since this cannot be explained on the basis of a previous theory (inverse square root of release layer thickness), we propose a diffusion-limited mechanism to explain this reaction process. With the diffusion constant being a mean-free-path-dependent parameter, a relation between the mean free path and the width of the channel is considered. This relation is in reasonable agreement with the experimental results and gives a good physical insight to the reaction kinetics.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Institute of Pure and Applied Physics.
Keywords: Epitaxial lift-off (ELO), optimum AlAs thickness, reaction kinetics, diffusion-limited mechanism, mean free path.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 09 Sep 2010 11:54
Last Modified: 09 Sep 2010 11:54
URI: http://eprints.iisc.ernet.in/id/eprint/32106

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