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Photo induced optical changes in Sb/As2S3 multilayered film and (As2S3)(0.93)Sb-0.07 film of equal thickness

Naik, Ramakanta and Ganesan, R and Sangunni, KS (2010) Photo induced optical changes in Sb/As2S3 multilayered film and (As2S3)(0.93)Sb-0.07 film of equal thickness. In: Journal of Alloys and Compounds, 505 (1). pp. 249-254.

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Official URL: http://dx.doi.org/10.1016/j.jallcom.2010.06.039


The increase in optical band gap (photo bleaching) due to light illumination was studied at room temperature as well as at low (4.2 K) temperature for Sb/As2S3 multilayered film of 640 nm thickness by Fourier Transform Infrared Technique. The interdiffusion of Sb into As2S3 matrix results the formation of Sb-As2S3 ternary solid solutions which is explained by the change in optical band gap (E-g), absorption coefficient (alpha), Tauc parameter (B-1/2), Urbach edge (E-e). At the same time, photo darkening phenomena was observed in (As2S3)(0.93)Sb-0.07 film of same thickness both at low and room temperatures. From our X-ray Photoelectron Spectroscopy measurements,we are able to show that some of the As-As, S-S and Sb-Sb bonds are converted into As-S and S-Sb bonds in case of multilayers. We found that the energetically favoured heteropolar bond formation take place by a phonon-assisted mechanism using the lone pair pi electrons of S-2(0). But in case of (As2S3)(0.93)Sb-0.02 film, the homopolar bonds are playing a major role. (C) 2010 Elsevier B.V. All rights reserved.

Item Type: Journal Article
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Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Amorphous materials; Thin films; Optical properties; Photo induced effects; XPS; Low temperature.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 15 Sep 2010 09:33
Last Modified: 19 Sep 2010 06:16
URI: http://eprints.iisc.ernet.in/id/eprint/32136

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