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Experimental investigation of the dependence of barrier height on metal work function for metal---SiO2---p---Si (MIS) Schottky-barrier diodes in the presence of inversion

Chattopadhyay, P and Kumar, V (1988) Experimental investigation of the dependence of barrier height on metal work function for metal---SiO2---p---Si (MIS) Schottky-barrier diodes in the presence of inversion. In: Solid-State Electronics, 31 (2). pp. 143-146.

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Official URL: http://dx.doi.org/10.1016/0038-1101(88)90121-9

Abstract

The dependence of barrier height on the metal work function of metal-SiO2-p-Si Schottky barrier diodes was investigated and nonlinearity was found. This is explained by the theoretical model proposed recently by Chattopadhyay and Daw. The values of interface trap density and fixed charge density of the insulating layer of the diodes were calculated using this model and found to be appreciably different from those estimated by the usual method.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier science.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 17 Sep 2010 05:39
Last Modified: 19 Sep 2010 06:16
URI: http://eprints.iisc.ernet.in/id/eprint/32183

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