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High contrast laser writing in insitu textured germanium films via a novel chemical oxide formation

Rao, Kameswara L (1988) High contrast laser writing in insitu textured germanium films via a novel chemical oxide formation. In: Optics Communications, 65 (4). 239 -242.

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Official URL: http://dx.doi.org/10.1016/0030-4018(88)90159-9

Abstract

A high contrast laser writing technique based on laser induced efficient chemical oxidation in insitu textured Ge films is demonstrated. Free running Nd-YAG laser pulses are used for irradiating the films. The irradiation effects have been characterised using optical microscopy, electron spectroscopy and microdensitometry. The mechanism for the observed contrast has been identified as due to formation of GeO2 phase upon laser irradiation using X-ray initiated Auger spectroscopy (XAES) and X-ray photoelectron spectroscopy (XPS). The contrast in the present films is found to be nearly five times more than that known due to GeO phase formation in similar films.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier science.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 20 Sep 2010 11:01
Last Modified: 20 Sep 2010 11:01
URI: http://eprints.iisc.ernet.in/id/eprint/32235

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