Asokan, S and Parthasarathy, G and Gopal, ESR (1988) High-pressure studies on Ge-Te glasses. Evidence for a critical composition in IV-VI chalcogenide glassy systems. In: Philosophical Magazine Part B: Physics of Condensed Matter. Electronics, Optical and Magnetic Properties, 57 (1). pp. 49-60.Full text not available from this repository.
The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature and pressure. Under high pressure, all the glasses were found to undergo sharp discontinuous transitions from glassy semiconductors to crystalline metal. Several of the observed properties such as the transition pressure, conductivity activation energy and pre-exponential factor, exhibit anomalous trends at a composition x = 20. These results suggest that the x = 20 composition in the Ge-Te system should possess salient structural features. A model based on the unusual stability of structural units is proposed for explaining the anomaly at 20 at.% Ge concentration.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Taylor and Francis Group.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||20 Sep 2010 10:47|
|Last Modified:||20 Sep 2010 10:47|
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