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Impedance‐frequency characteristics of metal‐oxide‐semiconductor structures on polycrystalline silicon

Lakshmi , MVS and Ramkumar, K (1988) Impedance‐frequency characteristics of metal‐oxide‐semiconductor structures on polycrystalline silicon. In: Journal of Applied Physics, 63 (3). 934 -937.

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Abstract

This paper reports the variations in impedance with frequency of metal‐oxide‐semiconductor (MOS) structures on polycrystalline silicon. The origin of these impedance‐frequency characteristics are qualitatively explained. These characteristics indicate that the MOS structure on polycrystalline silicon can be exploited to realize voltage controlled filters.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 21 Sep 2010 09:31
Last Modified: 21 Sep 2010 09:31
URI: http://eprints.iisc.ernet.in/id/eprint/32292

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