Narayanan, Sankara EM and Annamalai, S and Sarma, GH and Iyer, Suman B and Kumar, Vikram (1988) Neutralization of phosphorus in polycrystalline silicon by hydrogenation. In: Journal of Applied Physics, 63 (8). pp. 2867-2868.
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Experimental evidence that phosphorus in silicon is neutralized by hydrogenation is presented by measuring changes in sheet resistance and Hall mobility carrier in heavily phosphorus‐doped polycrystalline films.
|Item Type:||Editorials/Short Communications|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||23 Sep 2010 09:42|
|Last Modified:||23 Sep 2010 09:42|
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