Bansal, Bhavtosh and Dixit, VK and Venkataraman, V and Bhat, HL (2003) Temperature dependence of the energy gap and free carrier absorption in bulk $InAs_0_._0_5Sb_0_._9_5$ single crystals. In: Applied Physics Letters, 82 (26). pp. 4720-4722.
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Temperature dependence of the energy gap and free carrier absorption in a high-quality $InAs_0_._0_5Sb_0_._9_5$ single crystal was studied between 90 K and 430 K through the absorption spectra. At this alloy concentration, the room-temperature energy gap was measured to be 0.15 eV. Varshni- and the Bose-Einstein-type fit parameters were obtained from the measured temperature dependence of the energy gap, and the latter gave the zero-temperature gap to be 0.214 eV. It was found that although Weider's empirical formula for the dependence of the energy gap on temperature and the alloy concentration agrees with the value of the gap at room temperature, it is inaccurate in describing its temperature dependence. From the free carrier absorption measurements, the phonon limited cross section of $7.35X10^-^1^6 cm^2$ at 15 \mu m was deduced at room temperature.
|Item Type:||Journal Article|
|Additional Information:||Copyright for this article belongs to American Institute of Physics (AIP).|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||08 Jun 2005|
|Last Modified:||08 Jul 2011 09:00|
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