ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Effect of La modification on antiferroelectricity and dielectric phase transition in sol-gel grown PbZrO3 thin films

Parui, Jayanta and Krupanidhi, SB (2010) Effect of La modification on antiferroelectricity and dielectric phase transition in sol-gel grown PbZrO3 thin films. In: Solid State Communications, 150 (37-38). pp. 1755-1759.

[img] PDF
la.pdf - Published Version
Restricted to Registered users only

Download (826Kb) | Request a copy
Official URL: http://dx.doi.org/10.1016/j.ssc.2010.07.024

Abstract

Antiferroelectricity of sol-gel grown pure and La modified PbZrO3 thin films, with a maximum extent of 6 mol%, has been characterized by temperature dependent P-E hysteresis loops within the applied electric field of 60 MV/m. It has been seen that on extent of La modification electric field induced phase transformation can be altered and at 40 degrees C its maximum value has been observed at +/- 38 MV/m on 6 mol% modifications whereas the minimum value is +/- 22 MV/m on 1 mol%. On La modification the variation of electric field induced phase transformations at 40 degrees C has been correlated with the temperature of ntiferroelectric phase condensation on cooling. The critical electric fields for saturated P-E hysteresis loops have been defined from field dependent maximum polarizations and their variations on La modification show a similar trend as found in their dielectric phase transition temperatures. (C) 2010 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Antiferroelectrics; Thin films; Sol-gel synthesis; Phase transition.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 04 Oct 2010 11:12
Last Modified: 04 Oct 2010 11:12
URI: http://eprints.iisc.ernet.in/id/eprint/32929

Actions (login required)

View Item View Item