Parui, Jayanta and Krupanidhi, SB (2010) Effect of La modification on antiferroelectricity and dielectric phase transition in sol-gel grown PbZrO3 thin films. In: Solid State Communications, 150 (37-38). pp. 1755-1759.
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Antiferroelectricity of sol-gel grown pure and La modified PbZrO3 thin films, with a maximum extent of 6 mol%, has been characterized by temperature dependent P-E hysteresis loops within the applied electric field of 60 MV/m. It has been seen that on extent of La modification electric field induced phase transformation can be altered and at 40 degrees C its maximum value has been observed at +/- 38 MV/m on 6 mol% modifications whereas the minimum value is +/- 22 MV/m on 1 mol%. On La modification the variation of electric field induced phase transformations at 40 degrees C has been correlated with the temperature of ntiferroelectric phase condensation on cooling. The critical electric fields for saturated P-E hysteresis loops have been defined from field dependent maximum polarizations and their variations on La modification show a similar trend as found in their dielectric phase transition temperatures. (C) 2010 Elsevier Ltd. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Antiferroelectrics; Thin films; Sol-gel synthesis; Phase transition.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||04 Oct 2010 11:12|
|Last Modified:||04 Oct 2010 11:12|
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