Kumar, Mahesh and Bhat, TN and Rajpalke, MK and Roul, B and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy. In: Bulletin of Materials Science, 33 (3). pp. 221-226.
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Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be similar to 28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative mechanism is proposed.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Indian Academy of Sciences.|
|Keywords:||Nitrides; nano-flowers; photoluminescence; RF-MBE.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||28 Oct 2010 06:20|
|Last Modified:||28 Oct 2010 06:20|
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