Pandian, V and Kumaran, V (1991) Two-stage photoquenching in semi-insulating GaAs:EL2. In: Journal of Applied Physics, 70 (9). 5114 -5116 .
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The photoquenching of EL2 in semi‐insulating gallium arsenide is seen to be a complex process, where at low temperatures the initial slow quenching is followed by a switch to fast quenching. A possible explanation involving lattice strain mediated cooperative structural relaxation arising out of transition to the metastable state is proposed.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||09 Nov 2010 10:59|
|Last Modified:||09 Nov 2010 10:59|
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