Pandian, V and Kumaran, V (1991) Two-stage photoquenching in semi-insulating GaAs:EL2. In: Journal of Applied Physics, 70 (9). 5114 -5116 .
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Abstract
The photoquenching of EL2 in semi‐insulating gallium arsenide is seen to be a complex process, where at low temperatures the initial slow quenching is followed by a switch to fast quenching. A possible explanation involving lattice strain mediated cooperative structural relaxation arising out of transition to the metastable state is proposed.
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright of this article belongs to American Institute of Physics. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 09 Nov 2010 10:59 |
| Last Modified: | 09 Nov 2010 10:59 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/33591 |
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