Pal, S and Bose, DN and Asokan , S and Gopal, ESR (1991) Anisotropic properties of the layered semiconductor in Te. In: Solid State Communications, 80 (9). pp. 753-756.
![[img]](http://eprints.iisc.ernet.in/style/images/fileicons/application_pdf.png) |
PDF
ANISOTROPIC_PROPERTIES_OF_THE_LAYERED_SEMICONDUCTOR.pdf - Published Version Restricted to Registered users only Download (318Kb) | Request a copy |
Abstract
Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright of this article belongs to Elsevier science. |
| Keywords: | High-Pressure. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU) |
| Date Deposited: | 11 Nov 2010 06:35 |
| Last Modified: | 11 Nov 2010 06:35 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/33625 |
Actions (login required)
 |
View Item |
