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Anisotropic properties of the layered semiconductor in Te

Pal, S and Bose, DN and Asokan , S and Gopal, ESR (1991) Anisotropic properties of the layered semiconductor in Te. In: Solid State Communications, 80 (9). pp. 753-756.

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Official URL: http://dx.doi.org/10.1016/0038-1098(91)90902-8

Abstract

Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier science.
Keywords: High-Pressure.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 11 Nov 2010 06:35
Last Modified: 11 Nov 2010 06:35
URI: http://eprints.iisc.ernet.in/id/eprint/33625

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