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Large low-frequency resistance noise in chemical vapor deposited graphene

Pal, Atindra Nath and Bol, Ageeth A and Ghosh, Arindam (2010) Large low-frequency resistance noise in chemical vapor deposited graphene. In: Applied Physics Letters, 97 (13).

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We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1-0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation. (C) 2010 American Institute of Physics. doi:10.1063/1.3493655]

Item Type: Journal Article
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Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 08 Nov 2010 07:35
Last Modified: 08 Nov 2010 07:35
URI: http://eprints.iisc.ernet.in/id/eprint/33680

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