Karunanithi, R and Raychaudhuri, AK and Szücs, Z and Shivashankar, GV (1991) Behaviour of power MOSFETs at cryogenic temperatures. In: Cryogenics, 31 (12). pp. 1065-1069.
Behaviour_of_power_MOSFETs_at_cryogenic.pdf - Published Version
Restricted to Registered users only
Download (404Kb) | Request a copy
In this paper an investigation is reported on Siemens-power-metal-oxide-semiconductor (SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic applications. The drain characteristics, temperature dependence of Rds(on) and switching behaviour have been studied in the temperature range 4.2 – 300 K in BSS91 and BSS92 MOSFETs. The experiments reveal that these types of power transistors are well suited for operations down to ≈ 30 K. However, below 30 K the operating characteristics make them unsuitable for application. This arises because of carrier freeze-out in the n− region on the substrate, which forms a drain.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier science.|
|Keywords:||Low temperature electronics;MOSFETs;switching.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||11 Nov 2010 06:41|
|Last Modified:||11 Nov 2010 06:41|
Actions (login required)