ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Behaviour of power MOSFETs at cryogenic temperatures

Karunanithi, R and Raychaudhuri, AK and Szücs, Z and Shivashankar, GV (1991) Behaviour of power MOSFETs at cryogenic temperatures. In: Cryogenics, 31 (12). pp. 1065-1069.

[img] PDF
Behaviour_of_power_MOSFETs_at_cryogenic.pdf - Published Version
Restricted to Registered users only

Download (404Kb) | Request a copy
Official URL: http://dx.doi.org/10.1016/0011-2275(91)90129-K

Abstract

In this paper an investigation is reported on Siemens-power-metal-oxide-semiconductor (SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic applications. The drain characteristics, temperature dependence of Rds(on) and switching behaviour have been studied in the temperature range 4.2 – 300 K in BSS91 and BSS92 MOSFETs. The experiments reveal that these types of power transistors are well suited for operations down to ≈ 30 K. However, below 30 K the operating characteristics make them unsuitable for application. This arises because of carrier freeze-out in the n− region on the substrate, which forms a drain.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier science.
Keywords: Low temperature electronics;MOSFETs;switching.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 11 Nov 2010 06:41
Last Modified: 11 Nov 2010 06:41
URI: http://eprints.iisc.ernet.in/id/eprint/33688

Actions (login required)

View Item View Item