Prasad, YVRK and Ravichandran, N (1991) Effect of stacking fault energy on the dynamic recrystallization during hot working of FCC metals: A study using processing maps. In: Bulletin of Materials Science, 14 (5). 1241 -1248.
Effect_of_stacking_fault_energy_on_the_dynamic_recrystallization.pdf - Published Version
The influence of stacking fault energy (SFE) on the mechanism of dynamic recrystallization (DRX) during hot deformation of FCC metals is examined in the light of results from the power dissipation maps. The DRX domain for high SFE metals like Al and Ni occurred at homologous temperature below 0·7 and strain rates of 0·001 s−1 while for low SFE metals like Cu and Pb the corresponding values are higher than 0·8 and 100 s−1. The peak efficiencies of power dissipation are 50% and below 40% respectively. A simple model which considers the rate of interface formation (nucleation) involving dislocation generation and simultaneous recovery and the rate of interface migration (growth) occurring with the reduction in interface energy as the driving force, has been proposed to account for the effect of SFE on DRX. The calculations reveal that in high SFE metals, interface migration controls DRX while the interface formation is the controlling factor in low SFE metals. In the latter case, the occurrence of flow softening and oscillations could be accounted for by this model.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Indian Academy of Sciences.|
|Keywords:||Dynamic recrystallization;stacking fault energy;power dissipation maps.|
|Department/Centre:||Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)|
|Date Deposited:||30 Nov 2010 10:04|
|Last Modified:||30 Nov 2010 10:04|
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