Das, Chandasree and Lokesh, R and Rao, Mohan G and Asokan, S (2010) Electrical switching behavior of amorphous Al23Te77 thin film sample. In: Journal of Non-Crystalline Solids, 356 (41-42). pp. 2203-2206.
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The electrical switching behavior of amorphous Al23Te77 thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al-Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. (C) 2010 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier science bv.|
|Keywords:||Electrical switching; Semiconductors; Thin films|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||18 Nov 2010 12:24|
|Last Modified:||18 Nov 2010 12:24|
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