Pandian, Velayuthan and Mohapatra, Yashowanta N and Kumar, Vikram (1991) Silver- and Gold-Related Deep Levels in Gallium Arsenide. In: Japanese Journal of Applied Physics, 30 (11A). 2815 -2818.Full text not available from this repository.
Characterization of silver- and gold-related defects in gallium arsenide is carried out. These impurities were introduced during the thermal diffusion process and the related defects are characterized by deep-level transient spectroscopy and photoluminescence. The silver-related center in GaAs shows a 0.238 eV photoluminescence line corresponding to no-phonon transition, whereas its thermal ionization energy is found to be 0.426 eV. The thermal activation energy of the gold-related center in GaAs is 0.395 eV, but there is no corresponding luminescence signal.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Institute of Pure and Applied Physics.|
|Keywords:||Deep Levels;Dlts;Photoluminescence;Liquid Phase Epitaxy; Gaas;Silver;Gold.|
|Date Deposited:||30 Nov 2010 09:33|
|Last Modified:||30 Nov 2010 09:33|
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