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Switching studies and the effect of irradiation on ferroelectric properties of TAAP and DTAAP

Shashikala, MN and Sangunni, KS and Bhat, HL (1991) Switching studies and the effect of irradiation on ferroelectric properties of TAAP and DTAAP. In: Ferroelectrics, 119 (1-4). pp. 123-135.

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Official URL: http://www.informaworld.com/smpp/content~db=all~co...

Abstract

Polarization switching processes in TAAP and DTAAP have been studied by the Merz method. The switching process in DTAAP is slower than in TAAP. The temperature dependence of switching time indicates that the crystal might contain groups of domain nuclei with different activation energies. X-ray irradiation causes an increase in the threshold field below which switching could not occur and decrease in the mobility of domain walls. Irradiation decreases the peak value of dielectric constant, Tc and increases the value of coercive field. Domain structure studies on TAAP crystals have shown that the crystals grow as both predominantly single domain and multi domains, depending on which the internal bias increases or remains unaffected upon irradiation.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Taylor and Francis Group.
Keywords: Polarization switching;irradiation;domains;dielectric constant;bias;coercive field.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 07 Dec 2010 08:31
Last Modified: 07 Dec 2010 08:31
URI: http://eprints.iisc.ernet.in/id/eprint/34184

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