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Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications

Cheek, G and Genis, A and DuBow, JB and Verneker, Pai VR (1979) Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications. In: Applied Physics Letters, 35 (7). pp. 495-497.

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Abstract

The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Inorganic & Physical Chemistry
Date Deposited: 16 Dec 2010 06:54
Last Modified: 16 Dec 2010 06:54
URI: http://eprints.iisc.ernet.in/id/eprint/34512

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