Cheek, G and Genis, A and DuBow, JB and Verneker, Pai VR (1979) Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications. In: Applied Physics Letters, 35 (7). pp. 495-497.
Antireflection.pdf - Published Version
Restricted to Registered users only
Download (190Kb) | Request a copy
The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Chemical Sciences > Inorganic & Physical Chemistry|
|Date Deposited:||16 Dec 2010 06:54|
|Last Modified:||16 Dec 2010 06:54|
Actions (login required)