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Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures

Bhat, Thirumaleshwara N and Roul, Basanta and Rajpalke, Mohana K and Kumar, Mahesh and Krupanidhi, SB and Sinha, Neeraj (2010) Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures. In: Applied Physics Letters, 97 (20).

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Abstract

The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si(100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p-Si(100) substrates. These dots were found to be single crystalline and grown along 001] direction. The junction between these two materials exhibits a strong rectifying behavior at low temperatures. The average barrier height (BH) was determined to be 0.7 eV from current-voltage-temperature, capacitance-voltage, and flat band considerations. The band offsets derived from built-in potential were found to be Delta E-C=1.8 eV and Delta E-V=1.3 eV and are in close agreement with Anderson's model. (C) 2010 American Institute of Physics. doi:10.1063/1.3517489]

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 03 Jan 2011 07:06
Last Modified: 03 Jan 2011 07:06
URI: http://eprints.iisc.ernet.in/id/eprint/34767

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