Krishna, Ghanashyam M and Kanakaraju, S and Rao, Narasimha K and Mohan, S (1993) Effects of thermal annealing on the properties of zirconia films prepared by ion-assisted deposition. In: Materials Science and Engineering B, 21 (1). pp. 10-13.
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The effect of thermal annealing in the range 300–800 °C on the properties of zirconia films prepared by ion assisted deposition was studied. It was found that at low temperature the cubic phase is formed. This phase is stable up to 700 °C. All the films exhibit a monophasic monoclinic structure at 800 °C. The stress, estimated from X-ray patterns, shows a transition from tensile to compressive with increasing ion fluence. The refractive index and extinction coefficient do not seem to change appreciably up to 700 °C, showing a marked degradation thereafter. Single step annealing to the highest temperature was found to result in better stability than multistep annealing.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||08 Feb 2011 05:26|
|Last Modified:||08 Feb 2011 05:26|
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