Prasad, MVN and Asokan, S and Parthasarathy, G (1993) Electrical-Resistivity Studies on GE-SE Glasses at High-Pressures and Low-Temperatures. In: Physics and Chemistry of Glasses, 34 (5). pp. 199-202.Full text not available from this repository.
High pressure electrical resistivity measurements were carried out on GexSe100-x (0 less-than-or-equal-to x less-than-or-equal-to 40) glasses at ambient and low temperatures using the Bridgman anvil system. All the melt quenched glasses show a discontinuous glassy semiconductor to crystalline metal transition at high pressures. The high pressure phases of Ge-Se samples do not correspond to any of the equilibrium phases of the system. Additionally, the variation of transition pressure (P(T)), ambient resistivity (rho0) and the activation energy (DELTAE(t)) with composition, exhibit a change in behaviour at x = 20 and 33. The unusual variations observed in these glasses are discussed in the light of chemical and percolation thresholds occurring in the glassy system.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Society of Glass Technology.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||08 Feb 2011 05:19|
|Last Modified:||08 Feb 2011 05:19|
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