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Plasma diagnostics of the high pressure oxygen-sputtering process

Muralidhar, GK and Mohan Rao, G and Menon, AG and Mohan, S (1993) Plasma diagnostics of the high pressure oxygen-sputtering process. In: Thin Solid Films, 224 (2). pp. 137-140.

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Official URL: http://dx.doi.org/10.1016/0040-6090(93)90423-M

Abstract

The characteristics of the high pressure oxygen-sputtering plasma in the pressure range 0.8–2.4 mbar have been studied using the Langmuir probe technique. The variation in plasma parameters such as positive ion density, electron density, mean electron energy and floating potential with pressure and temperature has been investigated. It has been observed that the positive ion density increases at high substrate temperatures whereas the negative ion density decreases. The study of the variation in mean electron energy and floating potential also indicated the possibility that the number of negative ions is less when the substrates are at elevated temperatures. Since the negative ions are supposed to cause re-sputtering and make the films off-stoichiometric, the reduction in the negative ion density as observed at elevated substrate temperatures is better suited for depositing stoichiometric YBa2Cu3O7−δ superconducting thin films.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Others
Date Deposited: 23 Feb 2011 06:04
Last Modified: 23 Feb 2011 06:04
URI: http://eprints.iisc.ernet.in/id/eprint/35688

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