Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE. In: Applied Surface Science, 257 (6). pp. 2107-2110.
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Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si3N4 (Si4+) but also in the intermediate nitridation states with one (Si1+) or three (Si3+) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si1+, Si3+, and Si4+ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si4+ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si3N4 by molecular beam epitaxy (MBE). (C) 2010 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science B.V.|
|Keywords:||Nitridation; MBE; Silicon nitride; GaN|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||01 Mar 2011 11:54|
|Last Modified:||01 Mar 2011 11:54|
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