Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Roul, Basanta and Kumar, Mahesh and Misra, P and Kukreja, LM and Sinha, Neeraj and Krupanidhi, SB (2011) Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE. In: Journal of Crystal Growth, 314 (1). pp. 5-8.
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Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 - 2 0) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (1 1 - 2 0) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434-3.442 eV. The film grown at 800 degrees C shows emission at 2.2 eV, which is attributed to yellow luminescence along with near band edge emission. (C) 2010 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science B.V.|
|Keywords:||High resolution X-ray diffraction; Atomic force microscopy; Molecular beam epitaxy; Nitrides; Non-polar GaN|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||08 Mar 2011 07:12|
|Last Modified:||08 Mar 2011 07:12|
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