ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Interfaces and traps in pentacene field-effect transistor

Sangeeth, Suchand CS and Stadler, P and Schaur, S and Sariciftci, NS and Menon, Reghu (2010) Interfaces and traps in pentacene field-effect transistor. In: Journal of Applied Physics, 108 (11).

[img] PDF
Traps.pdf - Published Version
Restricted to Registered users only

Download (750Kb) | Request a copy
Official URL: http://jap.aip.org/resource/1/japiau/v108/i11/p113...

Abstract

The equivalent circuit parameters for a pentacene organic field-effect transistor are determined from low frequency impedance measurements in the dark as well as under light illumination. The source-drain channel impedance parameters are obtained from Bode plot analysis and the deviations at low frequency are mainly due to the contact impedance. The charge accumulation at organic semiconductor-metal interface and dielectric-semiconductor interface is monitored from the response to light as an additional parameter to find out the contributions arising from photovoltaic and photoconductive effects. The shift in threshold voltage is due to the accumulation of photogenerated carriers under source-drain electrodes and at dielectric-semiconductor interface, and also this dominates the carrier transport. The charge carrier trapping at various interfaces and in the semiconductor is estimated from the dc and ac impedance measurements under illumination. (c) 2010 American Institute of Physics. doi: 10.1063/1.3517085]

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 09 Mar 2011 07:06
Last Modified: 09 Mar 2011 07:06
URI: http://eprints.iisc.ernet.in/id/eprint/35895

Actions (login required)

View Item View Item