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Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol-gel process

Vishwas, M and Rao, Narasimha K and Phani, AR and Gowda, Arjuna KV and Chakradhar, RPS (2011) Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol-gel process. In: Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 78 (2). pp. 695-699.

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Official URL: http://dx.doi.org/10.1016/j.saa.2010.11.051

Abstract

Amorphous SiO2 thin films were prepared on glass and silicon substrates by cost effective sol-gel method. Tetra ethyl ortho silicate (TEOS) was used as the precursor material, ethanol as solvent and concentrated HCl as a catalyst. The films were characterized at different annealing temperatures. The optical transmittance was slightly increased with increase of annealing temperature. The refractive index was found to be 1.484 at 550 nm. The formation of SiO2 film was analyzed from FT-IR spectra. The MOS capacitors were designed using silicon (1 0 0) substrates. The current-voltage (I-V), capacitance-voltage (C-V) and dissipation-voltage (D-V) measurements were taken for all the annealed films deposited on Si (1 0 0). The variation of current density, resistivity and dielectric constant of SiO2 films with different annealing temperatures was investigated and discussed for its usage in applications like MOS capacitor. The results revealed the decrease of dielectric constant and increase of resistivity of SiO2 films with increasing annealing temperature. (C) 2010 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science B.V.
Keywords: SiO2;Thin films;Sol-gel process;MOS capacitor;Annealing
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 12 Apr 2011 09:18
Last Modified: 12 Apr 2011 09:18
URI: http://eprints.iisc.ernet.in/id/eprint/35970

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