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Brush plated CdSe films and their photoelectrochemical characteristics

Murali, KR and Subramanian, V and Rangarajan, N and Lakshmanan, AS (1994) Brush plated CdSe films and their photoelectrochemical characteristics. In: Journal of Electroanalytical Chemistry, 368 (1-2). pp. 95-100.

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Official URL: http://dx.doi.org/10.1016/0022-0728(93)03090-C

Abstract

The brush plating technique has been employed for the first time to obtain CdSe films on Ti and conducting glass substrates. These films have been annealed in an argon atmosphere and their structural, optical and photoelectrochemical properties are discussed. The power conversion efficiency has been found to be 7.43% under an illumination of 80 mW cm-2. A peak quantum efficiency of 0.64 is obtained for an incident wavelength of 720 nm. Donor concentration of 3.42 x 10(17) cm-3, electron mobility of 3 cm2 V-1 s-1 and minority carrier diffusion length of 0.013 mum have been obtained.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier science.
Department/Centre: Division of Chemical Sciences > Inorganic & Physical Chemistry
Date Deposited: 25 Mar 2011 06:33
Last Modified: 25 Mar 2011 06:33
URI: http://eprints.iisc.ernet.in/id/eprint/36271

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