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Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium

Gurumurthy, S and Rao, KSRK and Sreedhar, AK and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumaran, V (1994) Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium. In: Bulletin of materials science, 17 (6). 1057 -1064 .

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Abstract

Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at similar to 1.14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Indian Academy of Sciences.
Keywords: Cadmium telluride;photoluminescence;annealing; stoiehiometry; indium doping.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 24 May 2011 08:42
Last Modified: 24 May 2011 08:42
URI: http://eprints.iisc.ernet.in/id/eprint/36548

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