Padmini , P and Kutty, TRN (1994) Influence of Bi 3+ ions in enhancing the magnitude of positive temperature coefficients of resistance in n-BaTiO3 ceramics. In: Journal of materials science: materials in electronics, 5 (4). 203-209 .
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Bi3+ ions substituting at Ba-sites in a limited concentration range with another donor dopant occupying the Ti-sites in polycrystalline BaTiO3 enhanced the positive temperature coefficient of resistance (PTCR) by over seven orders of magnitude. These ceramics did not require normal post sinter annealing or a change to an oxygen atmosphere during annealing. These ceramics had low porosities coupled with better stabilities to large applied electric fields and chemically reducing atmospheres. Bi3+ ions limited the grain growth to less than 8 mum in size, they enhanced the concentration of acceptor-type trap centres at the grain-boundary-layer regions and maintained complete tetragonality at low grain sizes in BaTiO3 ceramics.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Springer.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||24 May 2011 08:32|
|Last Modified:||24 May 2011 08:32|
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