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GaS and GaSe nanowalls and their transformation to $Ga_{2}O_{3}$ and GaN nanowalls

Gautam, Ujjal K and Vivekchand, SRC and Govindaraj, A and Rao, CNR (2005) GaS and GaSe nanowalls and their transformation to $Ga_{2}O_{3}$ and GaN nanowalls. In: Chemical Communications (31). pp. 3995-3997.

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Abstract

Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 degrees C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 degrees C, while maintaining dimensional integrity.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Royal Society of Chemistry.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 20 Sep 2005
Last Modified: 19 Sep 2010 04:20
URI: http://eprints.iisc.ernet.in/id/eprint/3669

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