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Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Krupanidhi, SB and Rao, Mohan G (1994) Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications. In: Thin Solid Films, 249 (1). 100-108 .

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Official URL: http://dx.doi.org/10.1016/0040-6090(94)90093-0

Abstract

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier science.
Department/Centre: Others
Date Deposited: 11 Apr 2011 04:15
Last Modified: 11 Apr 2011 04:15
URI: http://eprints.iisc.ernet.in/id/eprint/36710

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