Venkataramani, V (1994) Si, Si-Ge and the new heterostructure world. In: Current Science (Bangalore), 67 (11). 855-858 .
855+.pdf - Published Version
Semiconductor heterostructures based on AlAs/GaAs and other III-V compounds have been the focus of active research for some time now. Ih the last decade, a new heterostructure material, the strained Si/SiGe system, has emerged. This heterojunction technology can potentially be integrated into the current VLSI environment with large-scale impact in the growing microelectronics market. Si/SiGe heterojunction bipolar transistors with cut-off frequencies exceeding 100 GHz and other electronic and optical devices with superior properties compared to all-Si technology have been demonstrated in laboratories worldwide.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this artical belongs to Indian academy of sciences.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||13 Apr 2011 11:25|
|Last Modified:||13 Apr 2011 11:25|
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