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Si, Si-Ge and the new heterostructure world

Venkataramani, V (1994) Si, Si-Ge and the new heterostructure world. In: Current Science (Bangalore), 67 (11). 855-858 .

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Abstract

Semiconductor heterostructures based on AlAs/GaAs and other III-V compounds have been the focus of active research for some time now. Ih the last decade, a new heterostructure material, the strained Si/SiGe system, has emerged. This heterojunction technology can potentially be integrated into the current VLSI environment with large-scale impact in the growing microelectronics market. Si/SiGe heterojunction bipolar transistors with cut-off frequencies exceeding 100 GHz and other electronic and optical devices with superior properties compared to all-Si technology have been demonstrated in laboratories worldwide.

Item Type: Journal Article
Additional Information: Copyright of this artical belongs to Indian academy of sciences.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 13 Apr 2011 11:25
Last Modified: 13 Apr 2011 11:25
URI: http://eprints.iisc.ernet.in/id/eprint/36802

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