Waseda, Y and Jacob, KT and Iguchi, Y and Narushima, T (1994) Theoretical estimation of the effect of minor elements on the solubility of oxygen in silicon melt. In: Journal of Crystal Growth, 139 (3-4). pp. 357-362.
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The effect of fourteen minor elements (Al, As, B, Bi, C, Ga, Ge, In, N, P, Pb, S, Sb and Sn) on the solubility of oxygen in silicon melt has been estimated using a recently developed theoretical equation, with only fundamental physical parameters such as hard sphere diameter, atomic volume and molar heat of solution at infinite dilution as inputs. The results are expressed in the form of interaction parameters. Although only limited experimental data are available for comparison, the theoretical approach appears to predict the correct sign, but underestimates the magnitude of the interaction between oxygen and alloying elements. The present theoretical approach is useful in making qualitative predications on the effect of minor elements on the solubility of oxygen in silicon melt, when direct measurements are not available.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier science.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre
Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
|Date Deposited:||16 Apr 2011 13:26|
|Last Modified:||16 Apr 2011 13:26|
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