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Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

Chandra, Jagadeesh SV and Choi, Chel-Jong and Uthanna, S and Rao, Mohan G (2010) Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing. In: Materials Science in Semiconductor Processing, 13 (4). pp. 245-251.

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Official URL: http://dx.doi.org/10.1016/j.mssp.2010.08.002

Abstract

The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic beta-phase Ta2O5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta2O5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was < 20 nA cm(-2) at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was Poole-Frenkel. (C) 2010 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Tantalum oxide;Sputtering;Metal-insulator-semiconductor structure;Electrical properties
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 19 Apr 2011 06:09
Last Modified: 19 Apr 2011 06:09
URI: http://eprints.iisc.ernet.in/id/eprint/36947

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