Effect of hydrogenation on low temperature mobility and carrier concentration in Si/SiGe heterostructures

Raghavan, MNV and Venkataraman, V (1996) Effect of hydrogenation on low temperature mobility and carrier concentration in Si/SiGe heterostructures. In: 8th International Workshop on Physics of Semiconductor Devices, DEC 11-16, 1995, NEW DELHI, INDIA.

Full text not available from this repository.

Item Type:	Conference Paper
Additional Information:	Copyright of this article belongs to Narosa publishing house.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	28 Apr 2011 05:45
Last Modified:	28 Apr 2011 05:45
URI:	http://eprints.iisc.ernet.in/id/eprint/37128

Actions (login required)

View Item