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Effect of hydrogenation on low temperature mobility and carrier concentration in Si/SiGe heterostructures

Raghavan, MNV and Venkataraman, V (1996) Effect of hydrogenation on low temperature mobility and carrier concentration in Si/SiGe heterostructures. In: 8th International Workshop on Physics of Semiconductor Devices, DEC 11-16, 1995, NEW DELHI, INDIA.

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Official URL: http://md1.csa.com/partners/viewrecord.php?request...
Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Narosa publishing house.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 28 Apr 2011 05:45
Last Modified: 28 Apr 2011 05:45
URI: http://eprints.iisc.ernet.in/id/eprint/37128

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