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Epitaxial GaAs layers by MOCVD process: Growth and characterization

Modak, P and Hudait, MK and Krupanidhi, SB (1996) Epitaxial GaAs layers by MOCVD process: Growth and characterization. In: 8th International Workshop on Physics of Semiconductor Devices, DEC 11-16, 1995, NEW DELHI, INDIA.

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Official URL: http://md1.csa.com/partners/viewrecord.php?request...
Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Narosa publishing house.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 26 Apr 2011 06:46
Last Modified: 26 Apr 2011 06:46
URI: http://eprints.iisc.ernet.in/id/eprint/37167

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