Murugavel, S and Acharya, KV and Asokan, S (1996) High pressure electrical measurements on Ge-Te-Se glasses. In: International Journal of High Pressure Research, 15 (1). pp. 1-7.Full text not available from this repository.
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anvil System. The resistivity of the Ge-Te-Se samples is found to decrease continuously with increasing pressure, with the metallization occurring around 8 GPa. Ge20TexSe80-x glasses (10 less than or equal to x less than or equal to 50) with the mean co-ordination number Z(av) = 2.4 exhibit a plateau in resistivity up to about 4 GPa pressure, followed by a continuous decrease to metallic values. On the other hand, Ge10TexSe90-x glasses (10 less than or equal to x less than or equal to 40) having Z(av) = 2.2, exhibit a smaller plateau (only up to 1 GPa), followed by a decrease in resistivity with pressure. This subtle difference in the high pressure resistivity of Ge-Te-Se glasses with Z(av) < 2.4 and Z(av) greater than or equal to 2.4 can be associated with the changes in the local structure of the chalcogenide glasses with composition.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Taylor and francis group.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||28 Apr 2011 09:48|
|Last Modified:||23 Feb 2012 08:55|
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