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Pulsed laser deposited ZnO:In as transparent conducting oxide

Chirakkara, Saraswathi and Nanda, KK and Krupanidhi, SB (2011) Pulsed laser deposited ZnO:In as transparent conducting oxide. In: Thin Solid Films, 519 (11). pp. 3647-3652.

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Official URL: http://dx.doi.org/10.1016/j.tsf.2011.01.354

Abstract

Zinc oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown by pulsed laser deposition technique on corning glass substrate. The effect of indium concentration on the structural, morphological, optical and electrical properties of the film was studied. The films were oriented along c-direction with wurtzite structure and highly transparent with an average transmittance of more than 80% in the visible wavelength region. The energy band gap was found to decrease with increasing indium concentration. High transparency makes the films useful as optical windows while the high band gap values support the idea that the film could be a good candidate for optoelectronic devices. The value of resistivity observed to decrease initially with doping concentration and subsequently increases. IZO with 1% of indium showed the lowest resistivity of 2.41 x 10(-2) Omega cm and large transmittance in the visible wavelength region. Especially 1% IZO thin film was observed to be a suitable transparent conducting oxide material to potentially replace indium tin oxide. (C) 2011 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Pulsed laser deposition;In doped Zinc Oxide;Thin films;X-ray photoelectron spectroscopy;Resistivity
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 06 May 2011 05:07
Last Modified: 06 May 2011 05:07
URI: http://eprints.iisc.ernet.in/id/eprint/37367

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