Das, Chandasree and Rao, Mohan G and Asokan, S (2010) A Comparative Study of Electrical Switching Behavior of Certain Tellurium based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications. In: 3rd International Conference on Multi-Functional Materials and Structures, SEP 14-18, 2010, Chonbuk Natl Univ, Jeollabuk do, Jeonju, SOUTH KOREA, pp. 1207-1210.Full text not available from this repository.
This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.
|Item Type:||Conference Paper|
|Additional Information:||Copyright of this article belongs to Trans Tech Publications Inc.|
|Keywords:||Electrical switching;Chalcogenides;Thin films;Amorphous semiconductors|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||06 May 2011 06:41|
|Last Modified:||06 May 2011 06:41|
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