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Transport properties, structure, and radiation induced defect studies in amorphous carbon films

Bhattacharyya, S and Subramanyam, SV (1996) Transport properties, structure, and radiation induced defect studies in amorphous carbon films. In: Materials Science Forum, 223 . pp. 311-315.

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Official URL: http://www.scientific.net/MSF.223-224.311

Abstract

Amorphous conducting carbon films are prepared by plasma assisted chemical vapour deposition and their d.c. conductivity (similar to 100 Scm(-1)) is studied from 300K down to 4.2K. The films were irradiated by high energy ion beam(I+13, 170 MeV) with a dose of 10(13) ions/cm(2). As a result a marked decrease in conductivity by two to three orders in magnitude was observed. The structural changes and the defects in the films caused by ion irradiation are studied using photoluminescence, persistent photoconductivity, and ESR spectroscopy.

Item Type: Editorials/Short Communications
Additional Information: Copyright of this article belongs to Trans tech publications inc..
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 31 May 2011 05:45
Last Modified: 31 May 2011 05:45
URI: http://eprints.iisc.ernet.in/id/eprint/37652

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