Dutta, PS and Rao, Koteswara KSR and Bhat, HL and Kumar, Vikram (1995) Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide. In: Journal of Applied Physics, 77 (9). 4825-4827 .
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Improvements in optical and electrical properties were observed after ruthenium passivation of gallium antimonide surfaces. On passivation, luminescence efficiency increased up to 50 times and surface state density reduced by two orders of magnitude. Also, the reverse leakage current was found to decrease by a factor of 30ï¿½40 times. Increase in carrier mobility as a result of grain boundary passivation in polycrystalline GaSb was observed. Â© 1995 American Institute of Physics.
|Item Type:||Editorials/Short Communications|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||19 May 2011 05:11|
|Last Modified:||19 May 2011 05:11|
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