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Electrical characterization of surface defects in GaSb created by hydrogen plasma

Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1995) Electrical characterization of surface defects in GaSb created by hydrogen plasma. In: Applied Physics Letters, 66 (15). pp. 1986-1988.

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Abstract

Using steady state and transient capacitance measurements, the electrical characteristics of a defect layer on the surface of bulk GaSb created during the hydrogen plasma treatment is presented. The trap density, activation energies, and the thickness of the defect layer have been calculated. The trap densities are comparable in magnitude to the carrier concentration. The defects introduce multiple energy levels in the band gap. Typical defect layer thicknesses range from a few angstroms to a fraction of a micron. © 1995 American Institute of Physics.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 19 May 2011 04:59
Last Modified: 19 May 2011 04:59
URI: http://eprints.iisc.ernet.in/id/eprint/37710

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