ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Enhanced magnetoresistance in as?deposited oxygen?deficient La0.6Pb0.4MnO3-y thin films

Satyalakshmi, KM and Manoharan, Sundar S and Hegde, MS and Prasad, V and Subramanyam, SV (1995) Enhanced magnetoresistance in as?deposited oxygen?deficient La0.6Pb0.4MnO3-y thin films. In: Journal of Applied Physics, 78 (11). pp. 6861-6863.

[img] PDF
Enhanced_magnetoresistance.pdf - Published Version
Restricted to Registered users only

Download (347Kb) | Request a copy
Official URL: http://jap.aip.org/resource/1/japiau/v78/i11/p6861...

Abstract

The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630 degrees C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator-metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator-metal transition temperature against the 40% GMR in the case of stoichiometric thin films. (C) 1995 American Institute of Physics.

Item Type: Editorials/Short Communications
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 31 May 2011 05:17
Last Modified: 31 May 2011 05:17
URI: http://eprints.iisc.ernet.in/id/eprint/37721

Actions (login required)

View Item View Item