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Low electric field, easily reversible electrical set and reset processes in a Ge15Te83Si2 glass for phase change memory applications

Anbarasu, M and Asokan, S (2011) Low electric field, easily reversible electrical set and reset processes in a Ge15Te83Si2 glass for phase change memory applications. In: Journal of Applied Physics, 109 (8).

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Official URL: http://jap.aip.org/resource/1/japiau/v109/i8/p0845...

Abstract

We report here an easily reversible set-reset process in a new Ge15Te83Si2 glass that could be a promising candidate for phase change random access memory applications. The I-V characteristics of the studied sample show a comparatively low threshold electric field (E-th) of 7.3 kV/cm. Distinct differences in the type of switching behavior are achieved by means of controlling the on state current. It enables the observation of a threshold type for less than 0.7 mA beyond memory type (set) switching. The set and reset processes have been achieved with a similar magnitude of 1 mA, and with a triangular current pulse for the set process and a short duration rectangular pulse of 10 msec width for the reset operation. Further, a self-resetting effect is seen in this material upon excitation with a saw-tooth/square pulse, and their response of leading and trailing edges are discussed. About 6.5 x 10(4) set-reset cycles have been undertaken without any damage to the device. (C) 2011 American Institute of Physics. doi: 10.1063/1.3574659]

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 01 Jun 2011 11:46
Last Modified: 10 Jun 2011 05:30
URI: http://eprints.iisc.ernet.in/id/eprint/37808

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