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Rapid thermal processed thin films of niobium pentoxide (Nb2 O5) deposited by reactive magnetron sputtering

Pignolet, A and Rao, Mohan G and Krupanidhi, SB (1995) Rapid thermal processed thin films of niobium pentoxide (Nb2 O5) deposited by reactive magnetron sputtering. In: Thin Solid Films, 261 (1-2). pp. 18-24.

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Official URL: http://dx.doi.org/10.1016/S0040-6090(94)06470-9

Abstract

Niobium pentoxide thin films have been deposited on silicon and platinum-coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 30, and leakage current density of 10(-6) A cm(-2) al a field of 120 kV cm(-1). A rapid thermal annealing process at 800 degrees C further increased the dielectric constant to 90 and increased the leakage current density to 5 x 10(-6) A cm(-2). The current-voltage characteristics observed at low and high fields suggested a combination of phenomena at different regimes of applied electric field. The capacitance-voltage characteristics performed in the metal-insulator-semiconductor configuration indicated good electronic interfaces with a nominal trap density of 4.5 x 10(12) cm(-2) eV(-1), which is consistent with the behavior observed with conventional dielectrics such as SiO2 on silicon surfaces.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Annealing;Electrical properties and measurements;Niobium oxide;Sputtering
Department/Centre: Others
Date Deposited: 24 May 2011 06:32
Last Modified: 24 May 2011 06:32
URI: http://eprints.iisc.ernet.in/id/eprint/37871

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