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Rapid thermal processed thin films of reactively sputtered Ta2O5

Pignolet, A and Rao, Mohan G and Krupanidhi, SB (1995) Rapid thermal processed thin films of reactively sputtered Ta2O5. In: Thin Solid Films, 258 (1-2). pp. 230-235.

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Official URL: http://dx.doi.org/10.1016/0040-6090(94)06322-2

Abstract

Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have been deposited on silicon and platinum coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 24 and leakage current density of 9 x 10(-8) A cm(-2). A rapid thermal annealing process at temperatures above 700 degrees C crystallized the films, increased the dielectric relative permittivity, and decreased the leakage current. The dielectric constant for a film rapidly annealed at 850 degrees C increased to 45 and its leakage current density lowered to 2 x 10(-8) A cm(-2). The dielectric measurements in the MIS configuration showed that Ta2O5 might be used as a dielectric material instead of SiO2 or Si3N4 for integrated devices. The current voltage characteristics observed at low and high fields suggested different conduction mechanisms.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Amorphous materials;Dielectric properties;Electrical properties and measurements;Sputtering
Department/Centre: Others
Date Deposited: 24 May 2011 06:42
Last Modified: 24 May 2011 06:42
URI: http://eprints.iisc.ernet.in/id/eprint/37872

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