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Reactive magnetron co?sputtered antiferroelectric lead zirconate thin films

Yamakawa, K and Trolier‐McKinstry, S and Dougherty, JP and Krupanidhi, SB (1995) Reactive magnetron co?sputtered antiferroelectric lead zirconate thin films. In: Applied Physics Letters, 67 (14). pp. 2014-2016.

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Abstract

Antiferroelectric lead zirconate thin films were formed on platinum coated silicon substrates by a reactive magnetron co-sputtering method. The films showed (240) preferred orientation. The crystallization temperatures and the preferred orientation were affected by the lead content in the films. The electric field forced transformation from the antiferroelectric phase to the ferroelectric phase was observed at room temperature with a maximum polarization value of 36 mu C/cm(2). The average field to excite the ferroelectric state and that for the reversion to the antiferroelectric state were 267 and 104 kV/cm respectively. (C) 1995 American Institute of Physics.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 24 May 2011 07:43
Last Modified: 07 Jul 2011 06:30
URI: http://eprints.iisc.ernet.in/id/eprint/37877

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