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LaNiO3: a promising material for contact with YBa2 Cu3O7-x thin films

Kumar, D and Satyalakshmi, KM and Hegde, MS and Apte, PR and Pinto, R (1995) LaNiO3: a promising material for contact with YBa2 Cu3O7-x thin films. In: IEEE Transactions on Applied Superconductivity, 5 (4). pp. 3498-3503.

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Abstract

Epitaxial LaNiO3 metallic oxide thin films have been grown on c-axis oriented YBa2Cu3O7-delta thin films on LaAlO3 substrates by pulsed laser deposition technique and the interface formed between the two films has been examined by measuring the contact conductance of the same. The specific contact conductance of the interface measured using a modified four probe method was found to be 1.4 to 6 x 10(4) ohm(-1) cm(-2) at 77 K, There are indications that contact conductance can be brought closer to that obtained for noble metal-YBCO interface.

Item Type: Journal Article
Additional Information: Copyright 1995 IEEE. Personal use of this material is permitted.However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 31 May 2011 06:25
Last Modified: 31 May 2011 06:25
URI: http://eprints.iisc.ernet.in/id/eprint/38062

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